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Chungnam National University and GIST have developed an ultra-thin non-volatile memory device based on 2D transition metal chalcogenides (TMD), utilizing spontaneous electric polarization in Janus structures. This research indicates significant improvements in memory performance, with wider memory windows and greater data retention than conventional materials.

The study also explores the potential for neuromorphic devices that mimic brain synapses, demonstrating analog signal modulation capabilities. Supported by various national research initiatives, this work highlights a new paradigm for AI semiconductor technologies.