Fraunhofer IPMS Enhances Wafer Contamination Analysis with Ultratrace Elemental Techniques
Fraunhofer IPMS has expanded its analytical capabilities for wafer contamination by introducing ultratrace elemental analysis using vapor phase decomposition and ICP-MS. This method allows precise monitoring of surface contamination on 200- and 300-millimeter wafers, crucial for semiconductor functionality. The facility utilizes advanced technologies like the WSPS2 Wafer Surface Preparation System and iCap RQ mass spectrometer to improve characterization and quality assurance in semiconductor manufacturing.
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Fraunhofer IPMS is enhancing its wafer contamination analysis capabilities with ultratrace elemental analysis. The new method employs vapor phase decomposition combined with inductively coupled plasma mass spectrometry (VPD-ICP-MS) to monitor wafer surface contamination.
After etching wafers with hydrofluoric acid vapor, a droplet is applied to collect soluble residues, which are analyzed to quantify 39 elements. The laboratory is equipped with advanced tools such as the WSPS2 Wafer Surface Preparation System and the iCap RQ mass spectrometer, reinforcing its position in semiconductor manufacturing quality assurance.
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