UFS Secures US Patent for Innovative Cryogenic Sensing Technology
The University of the Free State (UFS) has been granted US Patent No. 12,490,571 for a new thin-film sensor designed for cryogenic applications. This technology is vital for industries like aerospace and quantum computing due to its stability at extreme temperatures.
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The University of the Free State (UFS) received US Patent No. 12,490,571 on December 2, 2025, for a thin-film sensor developed for cryogenic environments. The sensor operates effectively between 50 Kelvin and 500 Kelvin, making it suitable for applications in space exploration, medical imaging, and energy sectors.
The core materials used include graphitic carbon nitride, silicon, aluminium, and gold. This patent underscores the Qwaqwa Campus's role in high-tech innovation and international collaboration. As UFS expands its research initiatives, this achievement may enhance its global reputation and attract further partnerships, posing potential risks in competitive academic landscapes.
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