Advancements in E-mode GaN Quantum Well XHEMTs from Cornell University and Soctera Inc.
Cornell University and Soctera Inc. have developed enhancement-mode (E-mode) XHEMTs utilizing a gallium nitride quantum well. This innovation reduces gallium usage, presenting a cost-efficient alternative in semiconductor manufacturing.
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The enhancement-mode (E-mode) high-electron-mobility transistors (XHEMTs) utilize a gallium nitride (GaN) quantum well channel layer within an aluminium nitride (AlN) structure, providing a significant reduction in gallium consumption. The device was fabricated on bulk AlN using plasma-enhanced molecular beam epitaxy (MBE), with dimensions allowing coherent strain between materials.
A maximum drain current of 55.2mA/mm was achieved, with an on-resistance of 22.7Ω-mm. The findings indicate that while the device performs below existing E-mode standards, enhancements could be realized through layer thickness variation, different gate materials, and scaling gate lengths. This development may lead to more efficient manufacturing processes in the semiconductor sector.
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