Applied Materials Launches New Systems to Enhance 2nm Gate-All-Around Transistor Performance
Applied Materials has introduced new semiconductor manufacturing systems to improve the performance of Gate-All-Around (GAA) transistors for 2nm and smaller chip processes. Key innovations include the Viva radical treatment system for nanosheet smoothing, the Sym3 Z Magnum etch system for precise trench formation, and the Spectral ALD system for molybdenum contact deposition, which reduces electrical resistance by up to 15%. These technologies support the energy-efficient performance gains necessary for advanced AI chips.
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Applied Materials has unveiled three new semiconductor manufacturing systems aimed at enhancing Gate-All-Around (GAA) transistor performance for 2nm and smaller chip processes. The Viva radical treatment system utilizes pure radical species to smooth silicon nanosheets at the atomic level.
The Sym3 Z Magnum etch system employs second-generation pulsed voltage technology for precise 3D trench creation in GAA transistors. Additionally, the Spectral atomic layer deposition system deposits molybdenum contacts, reducing electrical resistance by up to 15% compared to tungsten. These systems are currently being used by various leading foundry-logic manufacturers.
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