China Develops POWER-750H Ion Implanter, Achieving 35% Self-Sufficiency in Semiconductor Equipment
China has successfully developed the POWER-750H, its first domestically-produced high-energy hydrogen ion implanter, achieving performance levels comparable to international standards. This milestone boosts the country's semiconductor manufacturing equipment self-sufficiency rate from 25% in 2024 to 35% last year, surpassing the 30% target set by authorities. Despite ongoing challenges, particularly in extreme ultraviolet lithography, China's technological advancements indicate a rapid acceleration in its semiconductor capabilities.
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China has announced the successful development of its first domestically-produced high-energy hydrogen ion implanter, the POWER-750H, reaching performance levels comparable to international standards. This advancement comes despite U.S. technological sanctions and marks a significant step towards self-reliance in semiconductor manufacturing equipment.
The China Institute of Atomic Energy reported that the ion implanter's core performance indicators align with advanced nation levels, indicating mastery over the entire research and development process. Additionally, China's semiconductor manufacturing equipment self-sufficiency rate increased from 25% in 2024 to 35% last year, surpassing the 30% target set by authorities. While challenges remain, particularly in areas like extreme ultraviolet lithography, the rapid pace of development suggests that China's technological progress is accelerating.
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