IVWorks Develops First 742GHz GaN HEMT Using reGaN Technology
IVWorks has achieved a significant milestone with the development of a 742GHz GaN HEMT, marking a breakthrough in high-frequency semiconductor technology. This advancement positions GaN as a competitive alternative for future sub-terahertz and terahertz electronic systems.
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IVWorks Co Ltd has successfully created the world's first gallium nitride (GaN) high-electron-mobility transistor (HEMT) with a maximum oscillation frequency of 742GHz, utilizing its proprietary reGaN technology. This achievement was presented at the 2026 IEEE/JSAP Symposium in Honolulu, Hawaii, by a research team from Kyungpook National University.
The device, featuring a 45nm gate length, also recorded an average frequency of 497GHz, setting a new standard for GaN technology. IVWorks' reGaN technology enables selective regrowth of n-type GaN, reducing contact resistance and achieving high process uniformity across a 4-inch wafer. The development has implications for advancing applications in 6G communications, radar systems, and defense electronics, showcasing the potential of GaN beyond traditional uses.
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