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Magnachip Semiconductor has launched a new family of insulated-gate bipolar transistors (IGBTs) at 650 V and 1200 V for solar inverters and energy storage systems, supporting applications up to 150 kW. The new IGBTs utilize a field-stop trench process, offering enhanced current capability and robustness.

The 650 V devices are rated at 75 A, while the 1200 V variants aim for higher current ratings. Future updates include packaging improvements and new higher-current options. This development aligns with Magnachip's strategic focus on power semiconductors, reflecting growth in the solar and energy storage sectors.