Magnachip Introduces New IGBT Family for Solar Inverters and Energy Storage Systems
Magnachip Semiconductor has launched a new generation of 650 V and 1200 V insulated-gate bipolar transistors (IGBTs) designed for solar inverters and energy storage systems, targeting applications from residential to industrial levels up to 150 kW. The devices feature a 40% reduction in cell pitch, enabling higher current density and lower conduction losses. Upcoming packaging updates and plans for 150 A 650 V devices and a new 750 V class are also in development, reflecting the company's strategic shift towards power semiconductors amidst growing solar and energy storage markets.
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Magnachip Semiconductor has launched a new family of insulated-gate bipolar transistors (IGBTs) at 650 V and 1200 V for solar inverters and energy storage systems, supporting applications up to 150 kW. The new IGBTs utilize a field-stop trench process, offering enhanced current capability and robustness.
The 650 V devices are rated at 75 A, while the 1200 V variants aim for higher current ratings. Future updates include packaging improvements and new higher-current options. This development aligns with Magnachip's strategic focus on power semiconductors, reflecting growth in the solar and energy storage sectors.
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