PVA TePla and Fraunhofer IISB Launch Joint Lab for Aluminum Nitride Substrates
PVA TePla AG and Fraunhofer IISB have established a joint lab for the production of aluminum nitride (AlN) substrates, marking a significant advancement in European semiconductor capabilities. This initiative aims to enhance the availability of monocrystalline AlN substrates, facilitating faster development and industrial application of AlN-based technologies.
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The joint lab between PVA TePla AG and Fraunhofer IISB focuses on producing 2-inch aluminum nitride (AlN) substrates. This collaboration leverages proprietary PVT technology to improve the availability of high-quality AlN substrates in Europe, addressing previous shortages that hindered the sector.
Currently, production is ramping up to enhance stability and yield. Additionally, Fraunhofer IISB is advancing the development of larger 4-inch and future 6-inch substrates. This initiative aims to strengthen European technological sovereignty in semiconductors and reduce dependency on external suppliers.
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