RIR Power Electronics Launches SiC Merged-PiN Schottky Diodes for High-Efficiency Power Systems
RIR Power Electronics Ltd has introduced silicon carbide (SiC) merged-PiN Schottky diodes, designed to enhance efficiency in power systems for electric vehicles, industrial applications, and energy infrastructure. These innovative diodes combine Schottky and PiN structures, offering benefits such as high surge current capability, low leakage at high temperatures, and improved reliability. Target applications include EVs, data centers, renewable energy systems, and aerospace, supported by RIR's extensive experience in high-power semiconductors.
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RIR Power Electronics Ltd has launched silicon carbide (SiC) merged-PiN Schottky (MPS) diodes, enhancing power device technology for electric vehicles (EVs), industrial power systems, and energy infrastructure. These diodes integrate Schottky and PiN structures into a single device, addressing efficiency, high-voltage blocking, and ruggedness.
SiC MPS diodes offer high surge current capability, low leakage at elevated temperatures, improved blocking robustness, near-zero reverse recovery, and increased system reliability. Target applications include EVs, data centres, renewable energy systems, industrial drives, aerospace, and green hydrogen. RIR leverages over 55 years of experience in high-power semiconductors, with a manufacturing campus in Odisha, India, to support a vertically integrated SiC ecosystem.
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