ROHM Introduces TSC3PAK Package for SiC MOSFETs Enhancing Efficiency in xEVs
ROHM has launched the TSC3PAK package for SiC MOSFETs, improving heat dissipation and enabling automated assembly. This development is critical as SiC technology expands in electric vehicles and industrial applications, enhancing performance while reducing costs.
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ROHM's new TSC3PAK package for SiC MOSFETs features a top-side cooling structure that allows for automated mounting and offers heat dissipation performance similar to conventional TO-247-4L packages. This innovation supports the growing use of SiC devices in onboard chargers (OBCs) and electric compressors in electric vehicles, as well as in high-performance server power supplies and PV inverters.
The TSC3PAK ensures a creepage distance of 6.66mm, accommodating an AC peak voltage of 1200 V while maintaining safety in high-voltage applications. Mass production commenced in June 2026, aiming to meet the demand for efficient power conversion solutions.
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