Rohm Launches 650V IGBT for Automotive Applications
Rohm has introduced a 650V IGBT with a VCE(sat) of 1.55V, targeting automotive and industrial applications. Mass production commenced in May 2026, with a monthly capacity of 1 million units, marking a significant advancement in semiconductor technology for vehicles.
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Rohm's new 650V insulated gate bipolar transistor (IGBT) features a collector-emitter saturation voltage of 1.55V, one of the lowest for automotive-grade products as of June 18, 2026. This fourth-generation IGBT is designed for electric compressors, high-voltage heaters, and industrial inverters, and complies with AEC-Q101 standards.
Mass production started in May 2026 with a capacity of 1 million units per month, and sample pricing is set at 1,300 yen per unit (approximately $8.13). The product lineup includes 12 TO-247N packaged and 10 bare-chip products, with further development planned for smaller surface-mountable IGBTs. As silicon carbide devices gain traction in high-power applications, the demand for 650V IGBTs for auxiliary automotive systems remains robust.
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