Samsung Launches HBM4E Chip at Nvidia GTC 2026, Enhancing AI Infrastructure Collaboration
Samsung Electronics unveiled its seventh-generation high-bandwidth memory (HBM4E) chip at Nvidia's GTC 2026 conference. The HBM4E supports speeds of 16 Gbps per pin and a bandwidth of 4.0 TB/s, marking a significant advancement over the previous generation, HBM4. Samsung highlighted its partnership with Nvidia, which includes supplying memory solutions and participating in AI processor manufacturing. The event showcased new technologies, including Hybrid Copper Bonding, and emphasized the companies' commitment to leading AI infrastructure development.
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Samsung Electronics introduced its HBM4E chip at Nvidia's GTC 2026 conference, featuring support for 16 Gbps per pin and a bandwidth of 4.0 TB/s. This represents a significant upgrade from the previous HBM4 generation.
The launch underscores the strengthened collaboration between Samsung and Nvidia, which extends to AI processor manufacturing, including the Groq 3 chip. Samsung also presented its Hybrid Copper Bonding technology, enhancing chip efficiency. The exhibition featured three focus areas: AI Factories, Local AI, and Physical AI, reflecting Samsung's commitment to advancing global AI technologies.
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