STMicroelectronics, Magnachip, Diodes, and Toshiba Release New High-Performance Power MOSFETs
Four companies have launched advanced MOSFETs to support the increased demands of 48 V power systems in automotive and data centers. The introduction of these devices addresses the need for improved efficiency and thermal management in modern power architectures.
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STMicroelectronics, Magnachip, Diodes Incorporated, and Toshiba have introduced new N-channel power MOSFETs targeting 48 V bus architectures in automotive and data center sectors. STMicroelectronics' Smart STripFET F8 series, including the STL059N4S8AG, offers low switching losses with an RDS(on) of 0.59 mOhm and a continuous current rating of 420 A.
Diodes’ DMTH10H1M7SPGWQ can handle 847 A with a maximum RDS(on) of 1.5 mOhm, while the 60V MDU060N010PSVRH from Magnachip features a 1.05 mOhm RDS(on) and improved switching speeds. Toshiba's TPHR6704RL achieves an RDS(on) of 0.67 mOhm, enhancing efficiency further. The trend towards 48 V systems necessitates these advancements to meet rising power density and efficiency requirements.
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