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Taiwan Semiconductor has launched the TSM2N7002 series of logic-level N-channel power MOSFETs, which are engineered for low drain-source on-state resistance to enhance efficiency in switching applications. They can withstand up to 60 V drain-source breakdown voltage and operate within a temperature range from -55°C to 150°C.

These MOSFETs feature low gate charge characteristics for rapid switching transitions, supporting compact design needs. ESD protection ratings range from 2 kV to 2.5 kV, and they comply with RoHS and halogen-free standards. Available in SOT-323-3, SOT-23-3, and SOT-363-6 packages, they are designed for applications such as low-side load switching and digital interfaces.