Toshiba Begins Shipping 1200V SiC MOSFET for AI Data Centers
Toshiba has initiated shipping test samples of the TW007D120E, a 1200V trench-gate SiC MOSFET, aimed at enhancing power efficiency in AI data centers. This development addresses increasing power demands driven by generative AI and high-voltage direct current systems.
Theia Market Signal Identification - AI Assisted
Toshiba Electronic Devices & Storage Corporation has commenced shipping test samples of its TW007D120E, a 1200V trench-gate SiC MOSFET. Targeting next-generation AI data centers, this device improves power conversion efficiency and reduces power consumption.
The TW007D120E features a proprietary trench-gate structure, achieving a 58% reduction in On-resistance per unit area and a 52% improvement in the trade-off metric between conduction and switching loss. It supports higher power density and thermal performance through a QDPAK package.
Mass production is anticipated in fiscal year 2026, with potential applications in automotive sectors as well. The technology, developed under the JPNP21029 project subsidized by NEDO, contributes to reduced CO₂ emissions across industrial sectors.
Comments