Adisyn Advances Low-Temperature Graphene Deposition for Semiconductors
Adisyn has achieved continuous graphene formation at low temperatures, crucial for semiconductor applications. This breakthrough may enhance semiconductor interconnect solutions, addressing challenges posed by traditional copper methods.
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Adisyn (ASX: AI1) has successfully demonstrated continuous graphene formation at low temperatures using industrial Atomic Layer Deposition (ALD) equipment, achieving full coverage on a 1cm x 1cm coupon. The deposition temperature was below 450°C, essential for semiconductor manufacturing integration.
This development aims to resolve issues of resistance and heat generation in copper interconnects. Adisyn plans to optimize recipes, conduct repeatability trials, and scale to wafer-level processes. Following a recent acquisition of 2D Generation’s semiconductor IP, Arye Kohavi was appointed Managing Director to strengthen this focus.
While advancing semiconductor applications, Adisyn is also exploring secondary applications, such as graphene-enhanced composite materials for radar reflection reduction. Successful scaling and industry partnerships will be crucial for commercialization.
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