First Monolithic Bidirectional Diamond Switches Fabricated by Japanese Researchers
Japanese researchers have successfully fabricated monolithic bidirectional diamond switches using 2DHG structures, achieving significant reductions in on-resistance to 8.2 mΩ-cm and maintaining blocking capabilities up to 290V. This advancement could enhance the performance and reduce costs of electric vehicle on-board chargers.
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Researchers from Power Diamond Systems Inc, Waseda University, and Kyushu Institute of Technology have created the first monolithic bidirectional diamond switches based on two-dimensional hole gas (2DHG) structures. The switches exhibit an on-resistance of 8.2 mΩ-cm, a significant improvement over existing deep-depletion diamond switches, and maintain a blocking capability of 290V.
The fabrication involved microwave plasma chemical vapor deposition (MPCVD) on diamond substrates, with a two-layer structure consisting of a diamond buffer and unintentionally doped diamond. The devices utilized hydrogen plasma treatment to form the 2DHG channel, while selective area MPCVD doped contact regions with boron.
Though the devices show competitive on-resistance with gallium nitride and silicon carbide, further optimization is needed to enhance breakdown voltage performance. Potential applications include cost-effective, high-density single-stage on-board chargers for electric vehicles.
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