Fujitsu Develops High-Efficiency SiAlN MIS HEMTs for 6G and X-band Applications
Fujitsu has achieved a SiAlN MIS HEMT with over 70% PAE and 10W/mm output power for X-band. This innovation is significant for advancing both 6G mobile communications and radar systems in defense and meteorology.
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Fujitsu Ltd has developed a silicon aluminium nitride (SiAlN) metal-insulator-semiconductor high-electron-mobility transistor (MIS HEMT) achieving over 70% power-added efficiency (PAE) and 10W/mm output power in the 8-12GHz X-band. This device is positioned for applications in 6G communications and microwave power amplifiers.
The SiAlN structure enhances dielectric performance, which is critical for high output power and efficiency in amplifiers, addressing challenges with gate leakage and voltage swing. The HEMT displays improved power characteristics, achieving 74.3% PAE at 8GHz with optimized load-pull measurements.
Furthermore, the device shows potential for S-band applications, with PAE reaching 80.6% at 3GHz. The findings suggest significant implications for communication range and power consumption in future technologies.
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