Ghent University Develops Epitaxially Grown Nano-Ridge Surface-Emitting Lasers on Silicon Wafers
Researchers at Ghent University - imec have developed nano-ridge surface-emitting lasers (NRSELs) epitaxially grown on 300 mm silicon wafers. This innovation leverages one-dimensional photonic crystal modes, enabling scalable, tunable surface emission. The NRSEL design overcomes limitations of traditional VCSELs by integrating high-quality III-V materials directly on silicon, allowing for flexible emission wavelengths and reduced device complexity. This advancement is poised to enhance applications in telecommunications, LIDAR, and quantum technologies.
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A team led by Professor Dries Van Thourhout at Ghent University - imec has created nano-ridge surface-emitting lasers (NRSELs) directly grown on 300 mm silicon wafers. Utilizing one-dimensional photonic crystal modes and symmetry-protected bound states, NRSELs offer scalable and tunable surface emission, overcoming traditional VCSEL limitations.
The architecture enables emission wavelength customization through nano-ridge geometry and dielectric overlays. This technology supports integration with silicon photonics, paving the way for high-density laser arrays and electrically pumped devices. The NRSEL enhances performance and manufacturability while maintaining compatibility with semiconductor processing.
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