Mitsubishi Electric and University of Tsukuba Elucidate Hydrogen-Driven Free Electron Generation in Silicon
Researchers from Mitsubishi Electric and the University of Tsukuba have uncovered the mechanism by which hydrogen generates free electrons in silicon, enhancing electron concentration control in power semiconductors. This breakthrough could lead to improved efficiency in insulated gate bipolar transistors (IGBTs), with demonstrated power loss reductions of up to 20% through hydrogen ion implantation. The findings may also extend to diamond and other ultra-wide bandgap materials, supporting advancements in energy-efficient technologies and carbon neutrality initiatives.
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Researchers from Mitsubishi Electric Corporation, University of Tsukuba, Institute of Science Tokyo, and Quemix Corporation have elucidated the mechanism by which hydrogen generates free electrons in silicon. This discovery enhances electron concentration control in silicon power semiconductors, potentially improving the efficiency of insulated gate bipolar transistors (IGBTs) and reducing power losses.
The research identified a defect complex involving interstitial silicon and hydrogen, facilitating electron release. Initial calculations indicate this mechanism may also be applicable to diamond and other ultra-wide bandgap (UWBG) materials, which are challenging to control for electron concentration.
Mitsubishi Electric demonstrated up to a 20% reduction in power loss in silicon IGBTs and diodes using hydrogen ion implantation. This advancement aims to support the development of efficient power semiconductors and contribute to carbon neutrality efforts.
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