Reversible Topological Phase Transition in β-Ag₂Te via Gate Voltage Achieved by Nankai University Team
Nankai University researchers have demonstrated a reversible topological phase transition in β-Ag₂Te nanoflakes using an out-of-plane gate voltage. This innovation allows for enhanced control of electronic states in devices, promising significant advancements in low-power electronics.
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Professor Jinxiong Wu and his team at Nankai University reported a device-level reversible topological phase transition in β-Ag₂Te nanoflakes, driven by an out-of-plane gate voltage. This technique utilizes the Stark effect to toggle between topologically nontrivial and trivial phases, facilitating effective current flow control.
The developed topological phase transition field-effect transistor (TPT-FET) achieves a current on-off ratio exceeding 10⁴, enhancing device lifespan and operational efficiency. The findings may influence fields such as spintronics and quantum computing, as this method enables non-invasive tuning of quantum properties, paving the way for durable, reconfigurable components in semiconductor technology.
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