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A semiconductor breakthrough in China involves kappa phase gallium oxide, confirmed by researchers at Beijing University of Posts and Telecommunications. This material exhibits ferroelectric properties, allowing it to store data and perform high power electronic operations simultaneously.

Such capabilities are significant for military radar systems, where efficiency and reliability are critical. Gallium oxide's ability to operate at higher voltages and temperatures could reduce system size and improve energy efficiency. Companies like Hangzhou Garen Semiconductor are advancing industrial production of gallium oxide, enhancing China's position in the global semiconductor supply chain and supporting future defence technology developments.