EPC2366 eGaN FET Wins EPDT 2025 Product of the Year Award
Efficient Power Conversion (EPC) announced that its EPC2366 40 V eGaN power transistor received the EPDT 2025 Product of the Year Award in the Power Transistor category. The EPC2366 features low RDS(on) of 0.8 mΩ, enabling high efficiency and performance in applications like data centers and robotics.
It can handle up to 88 A of continuous drain current and has a compact 3.3 × 2.6 mm PQFN package optimized for thermal performance. EPC also developed the EPC90167 evaluation board to facilitate testing of the EPC2366 in high-frequency applications, supporting gate drive from 7.5 V to 12 V and offering flexibility for various modulation schemes. The EPC2366 is particularly effective for synchronous rectification in high-density power applications.
