Theia

Article

Falcomm Launches 4 W Dual-Stage GaN Power Amplifier for 17 to 22 GHz Applications

DEFENSE

Falcomm has introduced the FGN1902, a dual-stage GaN power amplifier designed for frequencies between 17 to 22 GHz. This device provides a saturated output power of 35.2 dBm (approximately 3.3 W) and a gain of 19.1 dB, with a power added efficiency (PAE) of 43.1%.

It operates on a DC supply range of 15 to 24 V while consuming less than 11 W. The amplifier is packaged in a QFN format and is targeted for applications in SATCOM, wireless backhaul, defense, and R&D.

Falcomm Launches 4 W Dual-Stage GaN Power Amplifier for 17 to 22 GHz Applications
Mar 19, 2026, 6:28 AM

No comments yet. Be the first to share your thoughts!