Tokyo Electron Device and ITES Unveil UV-Laser Inspection System for SiC Reliability
Tokyo Electron Device and ITES are developing the ITS-SCX100 wafer inspection system to address reliability issues in SiC devices. Orders for this new technology are expected to begin in September 2026, aiming to enhance the efficiency of evaluating latent defects in power semiconductors.
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Tokyo Electron Device Ltd. and ITES Co. are collaborating to launch the ITS-SCX100, a wafer inspection system that utilizes UV laser irradiation to identify latent defects in silicon carbide (SiC) devices. This initiative targets the reliability challenges associated with SiC power semiconductors, aiming to shorten material evaluation lead times significantly.
The system will officially commence taking orders in September 2026. Basal plane dislocations (BPDs), specific crystal defects affecting current-induced degradation and device reliability, will be a primary focus of this technology.
Both companies will provide evaluation services and solution proposals to material and device manufacturers, enhancing their market competitiveness. As the demand for SiC devices grows in sectors like electric vehicles and renewable energy, addressing these reliability issues will be crucial for broader adoption.
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