Toshiba Launches 80V N-Channel Power MOSFET for Enhanced Efficiency in AI Data Centers
Toshiba introduces the TPM1R408RH, an 80V N-channel MOSFET, reducing on-resistance by 26% and power-loss figure of merit by 45%. This advancement targets improved efficiency in power supplies for AI servers and communications base stations, essential as power density in data centers continues to rise.
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The TPM1R408RH, an 80V N-channel power MOSFET, features a maximum drain-source on-resistance of 1.4 mΩ, lowering conduction losses significantly. Designed using Toshiba's U-MOS11-H process, it enhances power supply efficiency for AI servers and base stations by reducing RDS(on) × Qg by 45% compared to previous models.
The device supports up to 288 A of continuous current and can operate at a maximum channel temperature of 175°C, addressing thermal constraints in dense server racks. Additionally, it minimizes electromagnetic interference, simplifying power supply design.
Shipments of the TPM1R408RH have commenced, with available SPICE models for rapid integration into simulations. This product reflects Toshiba's commitment to advancing its MOSFET lineup amid rising demands for efficient power solutions.
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