Wolfspeed Launches 10 kV SiC Power MOSFET for High-Voltage Systems
Wolfspeed has introduced the first commercially available 10 kV silicon carbide power MOSFET, designed to enhance high-voltage system performance and reduce costs. The device enables more flexible system architectures, improves durability, and supports applications like grid infrastructure and industrial electrification. It predicts a lifespan of 158,000 years at a 20 V gate bias and improves efficiency with a 99% conversion rate, potentially lowering system costs by 30%. Enhanced switching frequency and thermal performance simplify designs across various applications.

Wolfspeed has launched the first commercially available 10 kV silicon carbide (SiC) power MOSFET, which aims to enhance high-voltage system designs. The device allows for architectural flexibility, improving durability and supporting applications in grid infrastructure and AI data centers.
It predicts an operational lifetime of 158,000 years at a continuous 20 V gate bias and reduces overall system costs by approximately 30%. Its switching frequency increase from 600 Hz to 10,000 Hz can boost power density by over 300%, while achieving a 99% conversion efficiency reduces thermal requirements by up to 50%. The device also replaces mechanical switching in pulsed power applications, improving efficiency and control.




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